BC327 PNP Epitaxial Silicon Transistor -45V @ -800mA - (AD7571)

Description:

The BC327 PNP epitaxial silicon transistor is designed for reliable performance with a collector-emitter voltage of up to -50V and a working voltage (Vceo) of -45V. It supports a collector current (Ic) of -800 mA and can dissipate up to 625 mW of power, making it ideal for moderate power amplification and switching applications. The device also features an emitter-base voltage (Vebo) of -5V and can safely operate up to a junction temperature of 150 °C, ensuring stability under demanding thermal conditions.

Datasheet