IRF640N Power MOSFET N-Channel 200V @ 18A - (AD67122)

Description:

International Rectifier’s fifth-generation HEXFET® power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and robust device design for which HEXFET power MOSFETs are well known, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial and industrial applications at power dissipation levels of approximately 50 watts. The TO-220’s low thermal resistance and low package cost contribute to its wide industry acceptance. The D2Pak is a surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest on-resistance possible in any existing surface-mount package. The D2Pak is suitable for high-current applications due to its low internal on-resistance and can dissipate up to 2.0 W in a typical surface-mount application. The through-hole version (IRF640NL) is available for low

Data sheet