2N5551 NPN Transistor 160V @ 600mA - (AD57864)

Description:

This is the 2N5551, an NPN silicon BJT (Bipolar Junction Transistor). This small transistor can help in your project by being used to help drive large loads or in amplifying or switching applications. The 2N5551 is specifically rated at 160V and 600mA maximum.

Features:

- NPN

- Collector - Emitter Voltage: 160V

- Continuous Collector Current: 600mA

- hFE: 50 to 250 (for Ic = 0.1mA to 50mA)

- Package: TO-92

- Operating Temperature: -55 to +150°C

Datasheet