2N2907 BJT PNP Transistor -60V @ -600mA - (AD524)

Description:

This is the 2N2907, a PNP silicon BJT (bipolar junction transistor). This small transistor can help with your project by being used to drive large loads or for amplifying or switching applications. The 2N2907 is specifically rated at 40V and 500mA maximum.

Characteristics:

- Complement of 2N2222

- PNP

- Collector-Emitter Voltage: 40V

- Collector DC current: 500mA

- hFE: 35 to 100 (for Ic = 0.1mA to 500mA)

- Encapsulation: TO-92

- Operating temperature: -65 to +175°C

Documents:

Data sheet