IRF1010 N-Channel MOSFET 60V @ 75A - (AD41436)

Description:

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. In addition, this design provides an operating junction temperature of 175°C, fast switching speed, and improved repetitive avalanche resistance. These features make it an extremely efficient and reliable device for a wide variety of applications.

Datasheet