W15NB50 N-Channel Power MOSFET 500V @ 14.6A - 0.33Ω - (AD35405)

Description:

Using the latest high voltage MESH OVERLAY process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanch and dv/dt capabilities and unrivaled gate charge and switching characteristics.

Data sheet