W15NB50 N-Channel Power MOSFET 500V @ 14.6A - 0.33Ω - (AD35405)

Description:

Utilizing the latest high voltage mesh overlay process, SGS-Thomson has designed an advanced family of power MOSFETs with exceptional performance. The new, patent-pending strip layout, together with the company's patented edge termination structure, provides the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities, and unequalled gate charge and switching characteristics.

Datasheet