GT50JR22 IGBT Silicon N-Channel 600V @ 50A - (AD34493)

Description:

The GT50JR22 is a 6.5th generation N-channel IGBT, engineered for high-performance switching applications. It integrates a freewheeling diode monolithically on the IGBT chip, enabling efficient freewheeling operation. In enhancement mode, this device offers fast switching time with a typical fall time (tf) of 0.05 µs at 50A and a diode reverse recovery time (trr) of 0.35 µs at 15A. Its low saturation voltage of 1.55V ensures reduced conduction losses, while a maximum junction temperature of 175°C guarantees reliable operation under demanding conditions. Rated at 600V and 50A, it is ideal for robust power management.

Datasheet