VP2106N3-G-ND P-Channel DMOS FET - (AD32978)

Description:

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s proven silicon gate manufacturing process. This combination produces a device with the power handling capability of bipolar transistors, and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltages, high input impedance, low input capacitance, and high switching speeds are desired.

Datasheet