TIP3055 NPN Transistor 100V @ 15A - (AD24547)

Description:

Complementary silicon power transistors are designed for general-purpose power amplifier and switching applications.

Characteristics:

- Power dissipation-PD = 90W at TC = 25 ° C.

- DC current gain hFE = 20 ~ 100 at IC = 4.0A

- VCE (sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA

Documents:

Data sheet